Influence of Gallium Doping on the Electrical Performance of P3HT Thin-film Transistors Enriched by ZnO Nanoparticles

Authors

  • M. Ba Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia.
  • M. Erouel Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia.
  • M. Jdir Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia.
  • S. Mansouri Faculty of Sciences and Technology in Sidi Bouzid, 9100, Agricultural University Campus 9100 - BP - No. 380, Kairouan University, Tunisia.
  • S. Mrabet Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia.
  • A. Bouloufa Laboratory of Electrochemistry and Materials, University Ferhat Abbas Sétif-1, Algeria
  • Z. B en Ayadi Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia.
  • C. Vázquez-Vázquez Laboratory of Magnetism and Nanotechnology (NANOMAG), Department of Physical Chemistry, Faculty of Chemistry, Universidade de Santiago de Compostela, 15782 Santiago de Compostela, Spain.
  • L. El Mir Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia.

Abstract

Abstract: In the present work, p-type organic field-effect transistors based on poly (3-hexylthiophene) (P3HT) enriched by gallium doped-zinc oxide (GZO) nanoparticle thin films as the active layer were fabricated using the sol-gel technique coupled with spin-coating method and characterized using various techniques. The morphology of the thin films was analyzed using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques, and their optical properties were investigated using the UV-Vis-IR spectroscopy technique. In order to investigate the effect of Ga doping concentration on the electrical performances of the organic thin-film transistors (OTFTs) based on P3HT:GZO thin films, the current-voltage (I-V) measurements were carried out in the dark and in daylight using a Keithley 2612B Source Meter. The results demonstrate the ability to control both threshold voltage (Vth) and hysteresis by adjusting the Ga doping concentration within the active layer of the transistor devices. Moreover, the fabricated OTFT-P3HT:GZO devices exhibited significantly high performance, achieving a current ratio (Ion/Ioff) of 3.5 × 10³ with 1% Ga loading and demonstrating a 100-fold enhancement in field-effect saturation mobility (μsat) with 3% Ga loading, thereby showcasing their promising potential in a variety of practical applications, including cost-effective photodetectors and sensors.

Keywords: ZnO:Ga nanoparticles, P-type OTFT-P3HT:GZO, Gallium loading effect, Electrical properties, OTFT device performance.

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Published

2026-05-12

How to Cite

Ba, M., Erouel, M., Jdir, M., Mansouri, S., Mrabet, S., Bouloufa, A., en Ayadi, Z. B., Vázquez-Vázquez, C., & El Mir, L. (2026). Influence of Gallium Doping on the Electrical Performance of P3HT Thin-film Transistors Enriched by ZnO Nanoparticles. Jordan Journal of Physics, 19(1), 31–40. Retrieved from https://jjp.yu.edu.jo/index.php/jjp/article/view/1394

Issue

Vol. 19 No. 1 (2026)

Section

Articles