Alsheikhjader, Muhammed S. H., and Assim A. Issa. “A Simulated 45 Nm MOSFET Channel Process in Transimpedance Amplifier Design for Optoelectronics Applications”. Jordan Journal of Physics 17, no. 2 (July 28, 2024): 165–178. Accessed December 14, 2024. https://jjp.yu.edu.jo/index.php/jjp/article/view/328.