T. M. AL TAHTAMOUNI; A. SEDHAIN; J. Y. LIN; H. X. JIANG. Beryllium Doped p-type GaN Grown by Metal-Organic Chemical Vapor Deposition . Jordan Journal of Physics , [S. l.], v. 3, n. 2, 2025. Disponível em: https://jjp.yu.edu.jo/index.php/jjp/article/view/932. Acesso em: 28 apr. 2025.