ALSHEIKHJADER, M. S. H.; ISSA, A. A. A Simulated 45 nm MOSFET Channel Process in Transimpedance Amplifier Design for Optoelectronics Applications. Jordan Journal of Physics , [S. l.], v. 17, n. 2, p. 165–178, 2024. Disponível em: https://jjp.yu.edu.jo/index.php/jjp/article/view/328. Acesso em: 21 nov. 2024.