Photoluminescence Behavior of Cu2+xZn1-xSnS4 Thin Films by SILAR Method

Abstract

Cu₂ZnSnS₄ thin films were deposited on a glass substrate by chemical method. The XRD pattern confirms the formation of tetragonal structure CZTS and peak shift is noticed for Cu doping. The absorption coefficient is in the order of 10⁴cm^-1and the band gap is found to be about 1.9 eV – 1.75 eV. The PL spectra show red shift for higher Cu doping concentrations.

Keywords: Photoluminescence, Cu₂ZnSnS₄ thin films, SILAR Method, XRD.