I-V Characteristics Modeling of the Carbon Nanotube Field Effect Transistor (CNTFET)
DOI:
https://doi.org/10.47011/15.3.6Keywords:
Carbon nanotube, Virtual source, CNTFET, Electron mobility, I-V characteristics.Abstract
Cited by : Jordan J. Phys., 15 (3) (2022) 279-288
A simulation model of a zig-zag type (10.0) single-walled carbon-nanotube (SW-CNT) transistor based on virtual source (VS-CNTFET) approach is presented in this paper. This semi-empirical physics-based model allowed the study of current-voltage (I-V) characteristics of the transistor. Additionally, analytical modeling of reflection coefficient, electron mobility in the CNT with low and high electric field and parasitic resistances (Rs and Rd) were presented as well in this model. Then, the obtained I-V characteristics of this SW-CNTFET were explored and compared with literature data obtained experimentally. Results showed that this model was a different approach which is significant compared to the silicon model in terms of the carrier mobility, where µCNT = 104 cm2/Vs. Moreover, the impacts of some geometric parameters, such as CNT length and diameter as well as oxide permittivity on the I-V characteristics, were proved.
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