Raman Spectroscopy Investigation on Semi-curve Woven Fabricgraphene Synthesized by the Chemical Vapor Deposition Process

Abstract

Graphene is a single layer of two-dimensional carbon atoms bound in a
hexagonal lattice structure with zero band gap semiconductor. Chemical vapor deposition
(CVD) is one of the most promising, inexpensive and readily ways for synthesizing
monolayer pristine graphene. We have synthesized monolayer graphene shaped in semicurve woven frabic-graphene (SWF-G) on SiO2/Si substrate. Using Raman spectroscopy,
we studied the central suspended portion (i.e., 1-6) of it exerting compression (stress) to the
graphene supported on the substrate. The concentration of hole impurities on either side of
the central position of semi-curve woven fabric-graphene (SWF-G) is more than on its
central position. The variation of such hole doping concentration results in an upshift of 2D
peak position (pos(2D)) which is opposite for high electron doping even if there is no
intentional control of doping. The synthesized graphene is a single-layer high-quality new
structure graphene.
Keywords:  Graphene is a single layer of two-dimensional carbon atoms bound in a
hexagonal lattice structure with zero band gap semiconductor. Chemical vapor deposition
(CVD) is one of the most promising, inexpensive and readily ways for synthesizing
monolayer pristine graphene. We have synthesized monolayer graphene shaped in semicurve woven frabic-graphene (SWF-G) on SiO2/Si substrate. Using Raman spectroscopy,
we studied the central suspended portion (i.e., 1-6) of it exerting compression (stress) to the
graphene supported on the substrate. The concentration of hole impurities on either side of
the central position of semi-curve woven fabric-graphene (SWF-G) is more than on its
central position. The variation of such hole doping concentration results in an upshift of 2D
peak position (pos(2D)) which is opposite for high electron doping even if there is no
intentional control of doping. The synthesized graphene is a single-layer high-quality new
structure graphene.