A Simulated 45 nm MOSFET Channel Process in Transimpedance Amplifier Design for Optoelectronics Applications

Abstract

A 45-nm metal-oxide-semiconductor field-effect transistor (MOSFET) channel process was simulated in transimpedance amplifier design performance for fiber optics and other major optoelectronics applications. Combined concepts of input stage feedforward followed by a current mirror stage with local active inductor feedback were introduced. The key advantages of this particular design are of great importance, especially in using a PMOS-based local active inductor (feedback formation) instead of a spiral inductor resulting in high transimpedance amplifier (TIA) gain as well as in extremely low power consumption. An overall TIA gain of 68.2 dBΩ was obtained with the  bandwidth of 2.5 GHz, 0.555 mW of power consumption, and an input-referred noise current spectral density of 31.86  using a 1V DC budget supply.