Efros-Shklovskii variable range hopping conduction in 70Ge: Ga Semiconductor at very low temperature
Keywords:
Variable range hopping, electrical transport properties, Coulomb gap, Density of state, Electrical conductivity, 70Ge: Ga semiconductorAbstract
Abstract. In this study, we focused on investigating the electrical transport processes within the three-dimensional 70Ge: Ga system at low temperatures, ranging from 0.05 K to 0.25 K, in the absence of a magnetic field. Our analysis specifically targeted the insulating side of the Metal-Insulator Transition (MIT). The five samples studied have Ga concentrations n ranging from 1.753 1017 to 1.844 1017 cm-3. We established that the temperature T dependence of the electrical conductivity s =s0 exp[-(T0/T)x], with x = 0.5 follows to the Efros and Schklovski variable range hopping regime (ES - VRH) between the localized states located around the Fermi level (EF). This behavior indicates that the electronic density of states (DOS) is canceled very close to the EF with opening a soft Coulomb gap (CG) near the EF. Notably, we did not observe any transition to the Mott-VRH regime with T-0.25, which is characterized by a nearly constant and non-zero DOS near EF. Furthermore, we estimated some Efros and Schlovskii hopping parameters to further understand the electrical transport properties of the 70Ge: Ga system. The data presented in this study are derived from a 70Ge: Ga system prepared and reported in reference [20].
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