Analysis of generating a microwave frequency comb in laser-assisted scanning tunneling microscopy with a semiconductor sample

Analysis of generating a microwave frequency comb in laser-assisted scanning tunneling microscopy with a semiconductor sample

Authors

  • Marwan Mousa Prof. Dr.
  • Mark J. Hagmann Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah, 84112, USA

Keywords:

Upon the request of Dr Mmark Hagmann (attached email): Marwan S. Mousa will be the first author of this paper and Mark hagmann the second.

Abstract

Abstract: When a mode-locked laser is focused on the tunneling junction of a scanning tunneling microscope optical rectification generates microwave harmonics at integer multiples of the laser pulse repetition frequency. These harmonics set the present state-of-the-art for a narrow-linewidth microwave source because of the high stability of passive mode-locking in the laser. Hundreds of harmonics are measured with a signal-to-noise ratio exceeding 25 dB with a metal sample in the STM. However, the harmonics are attenuated by the spreading resistance with a resistive sample. Now the spreading resistance is quantified and analysis with equivalent circuit models is used to characterize the effects to support further measurements with semiconductors.

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Published

2025-10-31

How to Cite

Mousa, M., & Hagmann, M. J. (2025). Analysis of generating a microwave frequency comb in laser-assisted scanning tunneling microscopy with a semiconductor sample: Analysis of generating a microwave frequency comb in laser-assisted scanning tunneling microscopy with a semiconductor sample. Jordan Journal of Physics, 18(4), 455–466. Retrieved from https://jjp.yu.edu.jo/index.php/jjp/article/view/271

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