Laser and Aluminum-Induced Crystallization of Amorphous Silicon Thin Films: Influence of Power Density and Layers Stacking Configuration

Abstract

Abstract: This study examines the crystallization of sputtered amorphous silicon (a-Si) thin films in contact with aluminum thin films on Corning glass substrates under continuous-wave (CW) laser irradiation. The study reveals key factors that affect the transition from amorphous to polysilicon by varying laser power densities and exposure durations. The crystallinity was assessed by Raman spectroscopy, while the surface morphology and structural alterations were examined using scanning electron microscopy (SEM). The results demonstrate that crystallization occurs beyond a certain threshold power density, with the creation of polysilicon being enhanced by increased laser intensity and longer exposure time. The results also show that the stacking order of silicon and aluminum layers directly affects crystallization behavior. This aspect has not been previously explored. These results improve understanding of laser-induced aluminum-mediated crystallization, which has implications for optoelectronic applications and thin-film technologies.